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Model Number : S12060-02
Place of Origin : China
MOQ : 1
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 1000pcs/Month
Delivery Time : 5-8workingdays
Packaging Details : Standard Packing
Brand Name : Hamamatsu
Price : Negotiable
Type : Near Infrared (low temperature coefficient)
Light-receiving surface : φ0.2 mm
package : Metal
Package category : TO-18
S12060-02 Silicon Avalanche Photodiode Senspr Low Temperature Coeffi Cient Type APD For 800 Nm Band
Features:
Temperature coefficient of breakdown voltage:
 0.4 V/°C
 High-speed response
 High sensitivity and low noise
Applications:
Optical rangefinders
 FSO
 Optical fi ber communications
Datasheet:
| Maximum sensitivity wavelength (typical) | 800 nm | 
| Sensitivity wavelength range | 400 to 1000 nm | 
| Photosensitivity (Typical) | 0.5 A/W | 
| Dark current (maximum) | 0.5 nA | 
| Cutoff Frequency (Typical) | 1000 MHz | 
| Junction capacitance (typical) | 1.5 pF | 
| Breakdown voltage (typical) | 200 V | 
| Temperature coefficient of breakdown voltage (typ.) | 0.4 V/°C | 
| Gain ratio (typical value) | 100 | 

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                        S12060-02 Silicon Avalanche Photodiode Senspr Low Temperature Coeffi Cient Type APD For 800 Nm Band Images |